Intel SSD- The new generation with 144-layer NAND flash

Intel SSD 670p with 144L-QLC-NAND

In addition to the new Optane products, Intel has also introduced SSD with conventional NAND flash memory as part of the Memory and Storage Moment 2020. Consumers can expect the M.2 SSD 670p soon.Companies get more choice with D7-P5510 and D5-P5316. Common to all is the use of the new 144-layer NAND.

SSD 670p with 144L-QLC-NAND

In the first quarter of 2021, the successor of the SSD 660p and SSD 665p will be launched with the Intel SSD 670p. In the familiar M.2 form factor with 80 mm length, Intel packs the new 3D NAND generation with 144-layer architecture. In the case of the 670p, it is the QLC variant with four bits per memory cell, which should not only be cheaper, but also faster and more durable than previous QLC generations.

Intel SSD 670p

Although Intel has not yet submitted a detailed data sheet, it is known that the 670p uses PCIe 3.0, with storage capacities of 512 GB, 1 TB and 2 TB appears and undergoes an adjustment in the SLC cache, as graphics illustrate. The dynamic SLC cache, which decreases with increasing level, should shrink more slowly than with the 660p. Apparently, there is no advantage in this respect to the younger 665p, which is why it was not used for comparison. The always available static SLC cache remains untouched with 6 GB to 24 GB. Intel also speaks of a next-gen controller and 150 TBW per 512 GB.

Intel SSD 670p

144-layer NAND for Enterprise SSD

The 144-Layer-NAND is slowly entering the enterprise SSDs of Intel. The SSD D7-P5510, which uses a TLC variant of the new memory generation, is faster and more durable with 3 bits per memory cell than the QLC version. The D7-P5510 is available in a 2.5-inch package with U.2 connection and storage capacities of 3.84 TB or 7.68 TB. Availability is expected to be available this year, with cloud storage as an example. The predecessor is to be beaten in performance partly clearly. Intel speaks of up to 7 GB/s and 930,000 IOPS reading as well as about 4.2 GB/s and 190,000 IOPS writing.

Intel New NAND SSDs for Data Centers

Thanks to QLC-NAND with 128 GB per die, the D5-5316 delivers higher storage capacities of up to 30.72 TB, with both U.2 versions and the ruler-like E1.L version planned. With performance values of up to 6.8 GB/s and 800,000 IOPS when reading, Intel advertises, but without specifying write performance. The D5-5316 will be available within the first half of 2021.

Intel sees Floating Gate as an advantage

While ex-partner Micron made a radical change of architecture after the separation, Intel continues to rely on floating gate memory cells (FG) and sees advantages in this compared to the charge trap flash technology (CTF), which virtually all competitors use. Especially with regard to QLC, Intel sees an advantage in FG cells, as they are better shielded and can thus retain information for longer. The charge loss is significantly lower, especially over a longer period of time, as a graph illustrates. In addition, Intel considers the FG principle also promising for future PLC-NAND with 5 bits per cell.

Floating Gate Cell vs Charge Trap Cell

It remains to be seen whether future generations will continue to use FG technology in the course of the upcoming acquisition of Intel’s NAND division by SK Hynix.